191-->195: H radical away from DMDMOS, DMDMOS (Si-OH) lost CH3 radical by H atom attack (TSS) 1.0 20.00000000 0.00000000 0.00000000 0.00000000 15.00000000 0.00000000 0.00000000 0.00000000 15.00000000 O Si H 1 2 7 Selective dynamics Direct 0.32250165 0.49682310 0.49978861 T T T # 1 O1 0.37914266 0.57657063 0.50430161 T T T # 2 Si1 0.24130947 0.47754297 0.49973272 T T T # 3 Si2 0.35367965 0.65911767 0.46002964 T T T # 4 H1 0.44041962 0.54484924 0.45754665 T T T # 5 H2 0.39545125 0.59737492 0.59918291 T T T # 6 H3 0.20510546 0.54990547 0.54834396 T T T # 7 H4 0.22920007 0.39053768 0.54486464 T T T # 8 H5 0.21619427 0.47326146 0.40610953 T T T # 9 H6 0.59271840 0.80186783 0.48402189 F F F # 10 H