191-->195: H radical away from DMDMOS, DMDMOS (Si-OH) lost CH3 radical by H atom attack  (TSS)
    1.0
            20.00000000 0.00000000 0.00000000 
            0.00000000 15.00000000 0.00000000 
            0.00000000 0.00000000 15.00000000 
  O Si H
  1 2 7
Selective dynamics
Direct
        0.32250165 0.49682310 0.49978861  T T T      	#	1      	O1
        0.37914266 0.57657063 0.50430161  T T T      	#	2      	Si1
        0.24130947 0.47754297 0.49973272  T T T      	#	3      	Si2
        0.35367965 0.65911767 0.46002964  T T T      	#	4      	H1
        0.44041962 0.54484924 0.45754665  T T T      	#	5      	H2
        0.39545125 0.59737492 0.59918291  T T T      	#	6      	H3
        0.20510546 0.54990547 0.54834396  T T T      	#	7      	H4
        0.22920007 0.39053768 0.54486464  T T T      	#	8      	H5
        0.21619427 0.47326146 0.40610953  T T T      	#	9      	H6
        0.59271840 0.80186783 0.48402189  F F F      	#	10     	H